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| PartNumber | MMBT3906TT1G | MMBT3906TT1G , BZX85B15- | MMBT3906TT1G 3E |
| Description | Bipolar Transistors - BJT 200mA 40V PNP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-75-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 40 V | - | - |
| Collector Base Voltage VCBO | - 40 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.4 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT3906T | - | - |
| Height | 0.75 mm | - | - |
| Length | 1.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 0.8 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | - 0.2 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| MMBT3906TT1G | Bipolar Transistors - BJT 200mA 40V PNP | ||
| MMBT3906TT1G , BZX85B15- | 全新原裝 | ||
| MMBT3906TT1G 3E | 全新原裝 | ||
| MMBT3906TT1G/31 | 全新原裝 | ||
| MMBT3906TT1G/BKN | 全新原裝 | ||
| MMBT3906TT1G-CUT TAPE | 全新原裝 | ||
ON Semiconductor |
MMBT3906TT1G | Bipolar Transistors - BJT 200mA 40V PNP |