MMBT3906W

MMBT3906WT1G vs MMBT3906W vs MMBT3906WT1 , MAX6722UTY

 
PartNumberMMBT3906WT1GMMBT3906WMMBT3906WT1 , MAX6722UTY
DescriptionBipolar Transistors - BJT 200mA 40V PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-70-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 40 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage- 0.4 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT3906W--
Height0.85 mm--
Length2.1 mm--
PackagingReel--
Width1.24 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.2 A--
DC Collector/Base Gain hfe Min60--
Pd Power Dissipation150 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000219 oz--
製造商 型號 描述 RFQ
MMBT3906WT1G Bipolar Transistors - BJT 200mA 40V PNP
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ON Semiconductor
ON Semiconductor
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