MMBT4401-G

MMBT4401-G vs MMBT4401-GS18 vs MMBT4401-GS08

 
PartNumberMMBT4401-GMMBT4401-GS18MMBT4401-GS08
DescriptionBipolar Transistors - BJT VCEO=40V IC=600mA*** FREE SHIPPING ORDERS OVER $100 *** 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
ManufacturerComchip Technology--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage400 mV--
Maximum DC Collector Current600 mA--
Gain Bandwidth Product fT250 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT4401--
DC Current Gain hFE Max300--
PackagingReel--
BrandComchip Technology--
Continuous Collector Current600 mA--
Pd Power Dissipation300 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
Comchip Technology
Comchip Technology
MMBT4401-G Bipolar Transistors - BJT VCEO=40V IC=600mA
MMBT4401-GS18 全新原裝
MMBT4401-GS08 *** FREE SHIPPING ORDERS OVER $100 *** 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
MMBT4401-G RF Bipolar Transistors VCEO=40V IC=600mA
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