MMBT4401W

MMBT4401WT1G vs MMBT4401WT1 vs MMBT4401W

 
PartNumberMMBT4401WT1GMMBT4401WT1MMBT4401W
DescriptionBipolar Transistors - BJT 600mA 60V NPNBipolar Transistors - BJT 600mA 60V NPN
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-70-3SC-70-3-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max40 V40 V-
Collector Base Voltage VCBO60 V60 V-
Emitter Base Voltage VEBO6 V6 V-
Collector Emitter Saturation Voltage0.75 V0.75 V-
Maximum DC Collector Current0.6 A0.6 A-
Gain Bandwidth Product fT250 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMBT4401WT1--
Height0.85 mm0.85 mm-
Length2.1 mm2.1 mm-
PackagingReelReel-
Width1.24 mm1.24 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.6 A0.6 A-
DC Collector/Base Gain hfe Min2020-
Pd Power Dissipation150 mW150 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000219 oz0.000219 oz-
製造商 型號 描述 RFQ
MMBT4401WT1G Bipolar Transistors - BJT 600mA 60V NPN
MMBT4401W 全新原裝
MMBT4401WT1T1G 全新原裝
ON Semiconductor
ON Semiconductor
MMBT4401WT1 Bipolar Transistors - BJT 600mA 60V NPN
MMBT4401WT1 TRANS NPN 40V 0.6A SOT323
MMBT4401WT1G Bipolar Transistors - BJT 600mA 60V NPN
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