MMBT6428LT

MMBT6428LT1G vs MMBT6428LT1G , MAX6389XS vs MMBT6428LT1G , MAX6389XS46D3

 
PartNumberMMBT6428LT1GMMBT6428LT1G , MAX6389XSMMBT6428LT1G , MAX6389XS46D3
DescriptionBipolar Transistors - BJT 200mA 60V NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO40 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.6 V--
Maximum DC Collector Current0.2 A--
Gain Bandwidth Product fT700 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT6428L--
DC Current Gain hFE Max650--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.2 A--
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
MMBT6428LT1G Bipolar Transistors - BJT 200mA 60V NPN
MMBT6428LT1G , MAX6389XS 全新原裝
MMBT6428LT1G , MAX6389XS46D3 全新原裝
MMBT6428LT1G(1KM) 全新原裝
MMBT6428LT1G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
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