MMDF2N02ER2

MMDF2N02ER2G vs MMDF2N02ER2 vs MMDF2N02ER2(ON-SEMI)

 
PartNumberMMDF2N02ER2GMMDF2N02ER2MMDF2N02ER2(ON-SEMI)
DescriptionMOSFET NFET SO8D 25V 3.6A 100mOhmMOSFET 2N-CH 25V 3.6A 8-SOIC
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETFETs - Arrays-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current3.6 A--
Rds On Drain Source Resistance100 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReelTape & Reel (TR)-
Height1.5 mm--
Length5 mm--
Transistor Type2 N-Channel--
TypeMOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min2.6 S--
Fall Time25 ns, 18 ns--
Product TypeMOSFET--
Rise Time35 ns, 17 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time19 ns, 27 ns--
Typical Turn On Delay Time10 ns, 7 ns--
Unit Weight0.006596 oz--
Series---
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOIC-
FET Type-2 N-Channel (Dual)-
Power Max-2W-
Drain to Source Voltage Vdss-25V-
Input Capacitance Ciss Vds-532pF @ 16V-
FET Feature-Logic Level Gate-
Current Continuous Drain Id 25°C-3.6A-
Rds On Max Id Vgs-100 mOhm @ 2.2A, 10V-
Vgs th Max Id-3V @ 250μA-
Gate Charge Qg Vgs-30nC @ 10V-
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
MMDF2N02ER2G MOSFET NFET SO8D 25V 3.6A 100mOhm
MMDF2N02ER2 MOSFET 2N-CH 25V 3.6A 8-SOIC
MMDF2N02ER2G MOSFET 2N-CH 25V 3.6A 8-SOIC
MMDF2N02ER2(ON-SEMI) 全新原裝
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