 |  | | |
| PartNumber | MMDT5451-7 | MMDT5451 | MMDT5451 KNM |
| Description | Bipolar Transistors - BJT 160 / 160V 200mW | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | N | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Transistor Polarity | NPN, PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 150 V, 160 V | - | - |
| Collector Base Voltage VCBO | 160 V, 180 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | 0.2 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMDT5451 | - | - |
| DC Current Gain hFE Max | 240 | - | - |
| Height | 1 mm | - | - |
| Length | 2.2 mm | - | - |
| Width | 1.35 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | - 0.2 A | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000212 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Diodes Incorporated |
MMDT5451-7-F | Bipolar Transistors - BJT 160 / 160V 200mW | |
| MMDT5451-7 | Bipolar Transistors - BJT 160 / 160V 200mW | ||
| MMDT5451 | 全新原裝 | ||
| MMDT5451 KNM | 全新原裝 | ||
| MMDT5451-7 | TRANS NPN/PNP 160V/150V SOT363 | ||
| MMDT54517F | 全新原裝 | ||
| MMDT5451-7-F | TRANS NPN/PNP 160V/150V SOT363 |