MSB710-RT1

MSB710-RT1G vs MSB710-RT1 vs MSB710-RT1/CR

 
PartNumberMSB710-RT1GMSB710-RT1MSB710-RT1/CR
DescriptionBipolar Transistors - BJT 500mA 60V PNPTRANS PNP 50V 0.5A SC-59
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSC-59-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 60 V--
Collector Base Voltage VCBO- 50 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage- 0.6 V--
Maximum DC Collector Current0.5 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height1.09 mm--
Length2.9 mm--
PackagingReel--
Width1.5 mm--
BrandON Semiconductor--
Continuous Collector Current- 0.5 A--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
MSB710-RT1G Bipolar Transistors - BJT 500mA 60V PNP
MSB710-RT1 TRANS PNP 50V 0.5A SC-59
MSB710-RT1G TRANS PNP 50V 0.5A SC-59
MSB710-RT1/CR 全新原裝
MSB710-RT1G / CR 全新原裝
MSB710-RT1G , D3937-B367 全新原裝
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