MTY100N10E

MTY100N10E vs MTY100N10E-D vs MTY100N10EG

 
PartNumberMTY100N10EMTY100N10E-DMTY100N10EG
DescriptionMOSFET N-CH 100V 100A TO-264
ManufacturerON--
Product CategoryFETs - Single--
Series---
PackagingTube--
Part StatusObsolete--
FET TypeN-Channel--
TechnologyMOSFET (Metal Oxide)--
Drain to Source Voltage (Vdss)100V--
Current Continuous Drain (Id) @ 25°C100A (Tc)--
Drive Voltage (Max Rds On, Min Rds On)10V--
Vgs(th) (Max) @ Id4V @ 250A--
Gate Charge (Qg) (Max) @ Vgs378nC @ 10V--
Vgs (Max)±20V--
Input Capacitance (Ciss) (Max) @ Vds10640pF @ 25V--
FET Feature---
Power Dissipation (Max)300W (Tc)--
Rds On (Max) @ Id, Vgs11 mOhm @ 50A, 10V--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeThrough Hole--
Supplier Device PackageTO-264--
Package / CaseTO-264-3, TO-264AA--
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
MTY100N10E MOSFET N-CH 100V 100A TO-264
MTY100N10E-D 全新原裝
MTY100N10EG 全新原裝
Top