MUR2100E

MUR2100EG vs MUR2100ERL vs MUR2100E

 
PartNumberMUR2100EGMUR2100ERLMUR2100E
DescriptionRectifiers 1000V 2A UltraFastRectifiers 1000V 2A UltraFastDIODE GEN PURP 1KV 2A AXIAL
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryRectifiersRectifiersDiodes, Rectifiers - Single
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-41DO-41-
Vr Reverse Voltage100 V1000 V-
If Forward Current2 A2 A-
TypeFast Recovery RectifiersFast Recovery Rectifiers-
ConfigurationSingleSingle-
Vf Forward Voltage940 mV2.2 V-
Max Surge Current35 A35 A-
Ir Reverse Current2 uA10 uA-
Recovery Time20 ns100 ns-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 175 C-
SeriesMUR2100E-SWITCHMODE
PackagingBulkReelBulk
Height2.7 mm2.7 mm (Max)-
Length5.2 mm5.2 mm (Max)-
ProductRectifiersRectifiers-
Termination StyleThrough HoleThrough Hole-
Width2.7 mm2.7 mm (Max)-
BrandON SemiconductorON Semiconductor-
Pd Power Dissipation---
Product TypeRectifiersRectifiers-
Factory Pack Quantity1000--
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Unit Weight0.010935 oz0.010935 oz-
Package Case--DO-204AL, DO-41, Axial
Mounting Type--Through Hole
Supplier Device Package--Axial
Speed--Fast Recovery = 200mA (Io)
Diode Type--Standard
Current Reverse Leakage Vr--10μA @ 1000V
Voltage Forward Vf Max If--2.2V @ 2A
Voltage DC Reverse Vr Max--1000V (1kV)
Current Average Rectified Io--2A
Reverse Recovery Time trr--100ns
Capacitance Vr F---
Operating Temperature Junction---65°C ~ 175°C
製造商 型號 描述 RFQ
MUR2100EG Rectifiers 1000V 2A UltraFast
MUR2100ERLG Rectifiers 1000V 2A UltraFast
MUR2100ERLG-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
MUR2100ERL Rectifiers 1000V 2A UltraFast
MUR2100ERL DIODE GEN PURP 1KV 2A AXIAL
MUR2100E DIODE GEN PURP 1KV 2A AXIAL
MUR2100ERLG Rectifiers 1000V 2A UltraFast
MUR2100EG Rectifiers 1000V 2A UltraFast
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