NAND01GW3B2BZ

NAND01GW3B2BZA6E vs NAND01GW3B2BZA6 vs NAND01GW3B2BZA6F

 
PartNumberNAND01GW3B2BZA6ENAND01GW3B2BZA6NAND01GW3B2BZA6F
DescriptionNAND Flash 1 Gbit 2Gbit 2112b 1/8 V/3 V NFM
ManufacturerSTMicroelectronics-MICRON
Product CategoryNAND Flash-IC Chips
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseVFBGA-63--
SeriesNAND01G-B--
Memory Size1 Gbit--
Interface TypeParallel--
Organization128 M x 8--
Timing TypeAsynchronous--
Data Bus Width8 bit--
Supply Voltage Min2.7 V--
Supply Voltage Max3.6 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
PackagingTray--
Memory TypeNAND--
ProductNAND Flash--
Speed50 ns--
ArchitectureMultiplane--
BrandSTMicroelectronics--
Moisture SensitiveYes--
Product TypeNAND Flash--
Factory Pack Quantity210--
SubcategoryMemory & Data Storage--
製造商 型號 描述 RFQ
STMicroelectronics
STMicroelectronics
NAND01GW3B2BZA6E NAND Flash 1 Gbit 2Gbit 2112b 1/8 V/3 V NFM
NAND01GW3B2BZA6 全新原裝
NAND01GW3B2BZA6F 全新原裝
Micron
Micron
NAND01GW3B2BZA6E IC FLASH 1G PARALLEL 63VFBGA
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