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| PartNumber | NDD03N50Z-1G | NDD03N50Z | NDD03N50ZT4G |
| Description | MOSFET 500V 2.6A HVFET IPAK | MOSFET N-CH 500V 2.6A DPAK | |
| Manufacturer | ON Semiconductor | ON | ON |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | SMD/SMT |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 2.6 A | - | - |
| Rds On Drain Source Resistance | 3.3 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 58 W | - | - |
| Configuration | Single | Single | - |
| Packaging | Tube | Tube | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | ON Semiconductor | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | IPAK-3 | TO-252-3 |
| Pd Power Dissipation | - | 58 W | 58 W |
| Vgs Gate Source Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 2.6 A | 2.6 A |
| Vds Drain Source Breakdown Voltage | - | 500 V | 500 V |
| Rds On Drain Source Resistance | - | 3.3 Ohms | 3.3 Ohms |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 7 ns |
| Typical Turn Off Delay Time | - | - | 15 ns |
| Typical Turn On Delay Time | - | - | 9 ns |
| Qg Gate Charge | - | - | 16 nC |
| Forward Transconductance Min | - | - | 1.8 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NDD03N50Z-1G | MOSFET 500V 2.6A HVFET IPAK | |
| NDD03N50Z-1G | MOSFET N-CH 500V 2.6A IPAK | ||
| NDD03N50ZT4G | MOSFET N-CH 500V 2.6A DPAK | ||
| NDD03N50Z | 全新原裝 | ||
| NDD03N50ZT4G FQD3N55C | 全新原裝 |