 |  | | |
| PartNumber | NE3508M04-A | NE3508M04 | NE3508M04-A-ND |
| Description | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | ||
| Manufacturer | CEL | - | - |
| Product Category | Transistors - FETs, MOSFETs - Single | - | - |
| Packaging | Bulk | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package Case | FTSMM-4 (M04) | - | - |
| Technology | GaAs | - | - |
| Transistor Type | HFET | - | - |
| Gain | 14 dB | - | - |
| Pd Power Dissipation | 175 mW | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Operating Frequency | 2 GHz | - | - |
| Id Continuous Drain Current | 120 mA | - | - |
| Vds Drain Source Breakdown Voltage | 4 V | - | - |
| Transistor Polarity | N-Channel | - | - |
| Forward Transconductance Min | 100 mS | - | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - | - |
| NF Noise Figure | 0.45 dB | - | - |
| P1dB Compression Point | 18 dBm | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
CEL |
NE3508M04-EVNF23-A | RF Development Tools L to S band LNA Eval Brd | |
| NE3508M04-T2-A | 全新原裝 | ||
| NE3508M04-A | RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET | ||
| NE3508M04 | 全新原裝 | ||
| NE3508M04-A-ND | 全新原裝 | ||
| NE3508M04-T1-A | 全新原裝 | ||
| NE3508M04-T2 | 全新原裝 | ||
| NE3508M04-T2-A/79 | 全新原裝 | ||
| NE3508M04T2A | 全新原裝 |