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| PartNumber | NE3511S02A | NE3511S02-A | NE3511S02-T1C-A |
| Description | Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A) | RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
| Manufacturer | - | CEL | CEL |
| Product Category | - | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | S0-2 | S0-2 |
| Technology | - | GaAs | GaAs |
| Transistor Type | - | HFET | HFET |
| Gain | - | 13.5 dB | 13.5 dB |
| Pd Power Dissipation | - | 165 mW | 165 mW |
| Maximum Operating Temperature | - | + 125 C | + 125 C |
| Operating Frequency | - | 12 GHz | 12 GHz |
| Id Continuous Drain Current | - | 70 mA | 70 mA |
| Vds Drain Source Breakdown Voltage | - | 4 V | 4 V |
| Transistor Polarity | - | N-Channel | N-Channel |
| Forward Transconductance Min | - | 65 mS | 65 mS |
| Vgs Gate Source Breakdown Voltage | - | - 3 V | - 3 V |
| Gate Source Cutoff Voltage | - | - 0.7 V | - |
| NF Noise Figure | - | 0.3 dB | 0.3 dB |
| Packaging | - | - | Reel |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NE3511S02A | Trans JFET N-CH 4V 70mA 4-Pin Micro-X (Alt: NE3511S02A) | ||
CEL |
NE3511S02-A | RF JFET Transistors X to Ku Band Super Low Noise Amp N-Ch | |
| NE3511S02-T1C-A | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |