NE856M02-T1

NE856M02-T1-AZ vs NE856M02-T1 vs NE856M02-T1-A

 
PartNumberNE856M02-T1-AZNE856M02-T1NE856M02-T1-A
DescriptionRF Bipolar Transistors NPN Low Distort Amp
ManufacturerCELCEL-
Product CategoryTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF-
Series---
PackagingDigi-ReelR Alternate PackagingDigi-ReelR Alternate Packaging-
Part Aliases2SC5336-T1-AZ2SC5336-T1-AZ-
Mounting StyleSMD/SMTSMD/SMT-
Package CaseTO-243AATO-243AA-
TechnologySiSi-
Mounting TypeSurface MountSurface Mount-
Supplier Device PackageSOT-89SOT-89-
ConfigurationSingleSingle-
Power Max1.2W1.2W-
Transistor TypeNPNNPN-
Current Collector Ic Max100mA100mA-
Voltage Collector Emitter Breakdown Max12V12V-
DC Current Gain hFE Min Ic Vce50 @ 20mA, 10V50 @ 20mA, 10V-
Frequency Transition6.5GHz6.5GHz-
Noise Figure dB Typ f1.1dB @ 1GHz1.1dB @ 1GHz-
Gain12dB12dB-
Transistor PolarityNPNNPN-
Continuous Collector Current0.1 A0.1 A-
DC Collector Base Gain hfe Min250250-
製造商 型號 描述 RFQ
CEL
CEL
NE856M02-T1-AZ RF Bipolar Transistors NPN Low Distort Amp
NE856M02-T1 全新原裝
NE856M02-T1-A 全新原裝
NE856M02-T1-AZ/RF 全新原裝
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