NESG2101

NESG2101M05-EVPW24-A vs NESG2101M05-A vs NESG2101M05-EVPW24

 
PartNumberNESG2101M05-EVPW24-ANESG2101M05-ANESG2101M05-EVPW24
DescriptionRF Bipolar Transistors Silicon Germanium Amp. and OscillatorRF Bipolar Transistors NPN SiGe High FreqRF Bipolar Transistors For NESG2101M05-A Power at 2.4 GHz
ManufacturerRenesas ElectronicsCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsRF Evaluation and Development Kits, Boards
RoHSNY-
Transistor TypeBipolarBipolar-
TechnologySiGeSiGe-
Transistor PolarityNPN--
TypeRF Silicon GermaniumRF Silicon GermaniumTransistor
BrandRenesas ElectronicsCEL-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity11-
SubcategoryTransistorsTransistors-
Emitter Base Voltage VEBO-1.5 V-
Continuous Collector Current-35 mA-
Maximum Operating Temperature-+ 150 C-
Mounting Style-SMD/SMT-
Package / Case-SOT-343-
Pd Power Dissipation-175 mW-
For Use With Related Products--[email protected]
Series---
Frequency--2.4GHz
Supplied Contents--Board
製造商 型號 描述 RFQ
Renesas Electronics
Renesas Electronics
NESG2101M05-EVPW24-A RF Bipolar Transistors Silicon Germanium Amp. and Oscillator
CEL
CEL
NESG2101M05-A RF Bipolar Transistors NPN SiGe High Freq
NESG2101M05-EVPW24 RF Bipolar Transistors For NESG2101M05-A Power at 2.4 GHz
NESG2101M05-EVPW24-A RF Bipolar Transistors Silicon Germanium Amp. and Oscillato
NESG2101M05-A RF Bipolar Transistors NPN SiGe High Freq
NESG2101M16-T3-A RF Bipolar Transistors NPN High Frequency
NESG2101M05 RF Bipolar Transistors NPN SiGe High Freq
NESG2101M05 , EM6324QYSP 全新原裝
NESG2101M05-T1 RF Bipolar Transistors NPN SiGe High Freq
NESG2101M05-T1- 全新原裝
NESG2101M05-T1-A 全新原裝
NESG2101M05-T1-A , EM635 全新原裝
NESG2101M05-T1B 全新原裝
NESG2101M16-T3 全新原裝
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