NGTB30N60F stock, NGTB30N60F, NGTB30N60FWG


PartNumber	NGTB30N60FWG	NGTB30N60FLWG
Description	IGBT Transistors 600V/30A IGBT NPT TO-247	IGBT Transistors 600V/30A IGBT LPT TO-247
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	IGBT Transistors	IGBT Transistors
RoHS	Y	Y
Technology	Si	Si
Package / Case	TO-247	TO-247
Mounting Style	Through Hole	Through Hole
Configuration	Single	Single
Collector Emitter Voltage VCEO Max	600 V	600 V
Collector Emitter Saturation Voltage	1.45 V	1.65 V
Maximum Gate Emitter Voltage	30 V	30 V
Continuous Collector Current at 25 C	60 A	60 A
Pd Power Dissipation	167 W	250 W
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	NGTB30N60FWG	NGTB30N60FLWG
Packaging	Tube	Tube
Brand	ON Semiconductor	ON Semiconductor
Gate Emitter Leakage Current	100 nA	100 nA
Product Type	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	30	30
Subcategory	IGBTs	IGBTs
Unit Weight	0.229281 oz	0.229281 oz

Search Part Number : "NGTB30N60F", Match & Start with "NGTB30N60F" - Total : 6

製造商	型號	描述
ON Semiconductor	NGTB30N60FWG	IGBT Transistors 600V/30A IGBT NPT TO-247
	NGTB30N60FLWG	IGBT Transistors 600V/30A IGBT LPT TO-247
	NGTB30N60FWG	IGBT Transistors 600V/30A IGBT NPT TO-247
	NGTB30N60FLWG	IGBT Transistors 600V/30A IGBT LPT TO-247
	NGTB30N60FL	全新原裝
	NGTB30N60FLWG 30N60FL	全新原裝

NGTB30N60F