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| PartNumber | NJVMJD41CT4G | NJVMJD41CT4G-VF01 | NJVMJD41CT4G/MJD42C |
| Description | Bipolar Transistors - BJT BIP NPN 6A 100V TR | TRANS NPN 100V 6A DPAK-4 | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 100 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Gain Bandwidth Product fT | 3 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MJD41C | - | - |
| DC Current Gain hFE Max | 75 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 6 A | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Pd Power Dissipation | 1.75 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | NJVMJD41CT4G-VF01 | - | - |
| Unit Weight | 0.011993 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NJVMJD41CT4G | Bipolar Transistors - BJT BIP NPN 6A 100V TR | ||
| NJVMJD41CT4G/MJD42C | 全新原裝 | ||
| NJVMJD41CT4G | Bipolar Transistors - BJT BIP NPN 6A 100V TR | ||
ON Semiconductor |
NJVMJD41CT4G-VF01 | TRANS NPN 100V 6A DPAK-4 |