NP20P06SLG-E

NP20P06SLG-E1-AY vs NP20P06SLG-E1 vs NP20P06SLG-E2-AY

 
PartNumberNP20P06SLG-E1-AYNP20P06SLG-E1NP20P06SLG-E2-AY
DescriptionMOSFET Power MOSFET >1W
ManufacturerRenesas Electronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current20 A--
Rds On Drain Source Resistance48 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1200 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
Width6.1 mm--
BrandRenesas Electronics--
Fall Time80 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time160 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.011993 oz--
製造商 型號 描述 RFQ
Renesas Electronics
Renesas Electronics
NP20P06SLG-E1-AY MOSFET Power MOSFET >1W
NP20P06SLG-E1 全新原裝
NP20P06SLG-E1-AY MOSFET P-CH 60V 20A TO-252
NP20P06SLG-E2-AY 全新原裝
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