NP90N06

NP90N06VLG-E1-AY vs NP90N06VLG vs NP90N06VLG-E2-AY

 
PartNumberNP90N06VLG-E1-AYNP90N06VLGNP90N06VLG-E2-AY
DescriptionMOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4
ManufacturerRenesas Electronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current90 A--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge90 nC--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation105 W--
PackagingReel--
BrandRenesas Electronics--
Forward Transconductance Min66 S--
Fall Time7 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time76 ns--
Typical Turn On Delay Time17 ns--
Unit Weight0.011993 oz--
製造商 型號 描述 RFQ
Renesas Electronics
Renesas Electronics
NP90N06VLG-E1-AY MOSFET POWER DEVICE E AUTO MOS MP-3ZP UMOS4
NP90N06VLG 全新原裝
NP90N06VLG-E1-AY MOSFET N-CH 60V 90A TO-252
NP90N06VLG-E2-AY 全新原裝
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