PartNumber | NPT1012B | NPT2021 | NPT1010B |
Description | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN |
Manufacturer | MACOM | MACOM | MACOM |
Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
RoHS | Y | Y | Y |
Transistor Type | HEMT | HEMT | - |
Technology | GaN Si | GaN Si | GaN Si |
Gain | 13 dB | 14.2 dB | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 160 V | - |
Vgs Gate Source Breakdown Voltage | 3 V | 3 V | - |
Id Continuous Drain Current | 4 mA | 14 mA | - |
Maximum Operating Temperature | + 200 C | + 85 C | - |
Pd Power Dissipation | 44 W | - | - |
Mounting Style | Screw Mount | Screw Mount | - |
Packaging | Tray | Tray | Tray |
Configuration | Single | Single | - |
Operating Frequency | 4 GHz | 2.5 GHz | - |
Brand | MACOM | MACOM | MACOM |
P1dB Compression Point | 43 dBm | - | - |
Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
Rds On Drain Source Resistance | 440 mOhms | 340 mOhms | - |
Factory Pack Quantity | 30 | 25 | 25 |
Subcategory | Transistors | Transistors | Transistors |
Vgs th Gate Source Threshold Voltage | - 1.8 V | - 1.8 V | - |
Unit Weight | 0.007760 oz | 0.067412 oz | - |
Output Power | - | 45 W | - |
Minimum Operating Temperature | - | - 40 C | - |
Package / Case | - | TO-272 | - |
Operating Temperature Range | - | - 40 C to + 85 C | - |
Moisture Sensitive | - | Yes | - |