NSS1C201MZ

NSS1C201MZ4T3G vs NSS1C201MZ4T1G

 
PartNumberNSS1C201MZ4T3GNSS1C201MZ4T1G
DescriptionBipolar Transistors - BJT 100V LO VCE(SAT) TRA NPNBipolar Transistors - BJT 100V, NPN Low VCE Trans.
ManufacturerON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYY
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-223-4SOT-223-4
Transistor PolarityNPNNPN
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max100 V100 V
Collector Base Voltage VCBO140 V140 V
Emitter Base Voltage VEBO7 V7 V
Collector Emitter Saturation Voltage180 mV180 mV
Maximum DC Collector Current3 A2 A
Gain Bandwidth Product fT100 MHz100 MHz
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesNSS1C201MZ4NSS1C201MZ4
DC Current Gain hFE Max150150
Height1.57 mm1.57 mm
Length6.5 mm6.5 mm
PackagingReelReel
Width3.5 mm3.5 mm
BrandON SemiconductorON Semiconductor
DC Collector/Base Gain hfe Min120120
Pd Power Dissipation2000 mW2000 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity40001000
SubcategoryTransistorsTransistors
Unit Weight0.003951 oz0.003951 oz
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T1G Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
NSS1C201MZ4T3G Bipolar Transistors - BJT 100V LO VCE(SAT) TRA NPN
NSS1C201MZ 全新原裝
NSS1C201MZ4T1G-CUT TAPE 全新原裝
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