 | | ||
| PartNumber | NSS60100DMTTBG | NSS601 | NSS601-213N-AAAG1T |
| Description | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | WDFN-6 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - |
| Gain Bandwidth Product fT | 155 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 140 | - | - |
| Packaging | Reel | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 90 | - | - |
| Pd Power Dissipation | 2.27 W | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000600 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NSS60100DMTTBG | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | ||
| NSS60101DMTTBG | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | ||
| NSS601 | 全新原裝 | ||
| NSS601-213N-AAAG1T | 全新原裝 | ||
ON Semiconductor |
NSS60100DMTTBG | TRANS 2PNP 60V 1A | |
| NSS60101DMTTBG | TRANS NPN DUAL 60V 1A 6WDFN |