| PartNumber | NSV20200LT1G | NSV20101JT1G | NSV20200DMTWTBG |
| Description | Bipolar Transistors - BJT 20V PNP LOW VCE(SAT) XTR | Bipolar Transistors - BJT 20V NPN LOW VCE(SAT) | Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SC-89-3 | WDFN-6 |
| Transistor Polarity | PNP | NPN | - |
| Configuration | Single | Single | Dual |
| Collector Emitter Voltage VCEO Max | 20 V | 20 V | 20 V |
| Collector Base Voltage VCBO | 20 V | 40 V | 20 V |
| Emitter Base Voltage VEBO | 7 V | 6 V | - |
| Collector Emitter Saturation Voltage | - 0.18 V | - | 0.25 V |
| Gain Bandwidth Product fT | 100 MHz | 350 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | NSS20200L | NSS20101J | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Continuous Collector Current | 2 A | - | - |
| DC Collector/Base Gain hfe Min | 150 | - | 220 |
| Pd Power Dissipation | 460 mW | 300 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000282 oz | - | - |
| Maximum DC Collector Current | - | 2 A | - |
| Height | - | 0.7 mm | - |
| Length | - | 1.6 mm | - |
| Width | - | 0.85 mm | - |