![]() | |||
| PartNumber | NSV60100DMTWTBG | NSV60101DMTWTBG | NSV60101DMR6T1G |
| Description | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE( |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Series | NSS60100DMT | NSS60101DMT | - |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Technology | - | Si | - |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | WDFN-6 | SC-74-6 |
| Transistor Polarity | - | NPN | NPN |
| Configuration | - | Dual | Dual |
| Collector Emitter Voltage VCEO Max | - | 60 V | 60 V |
| Collector Base Voltage VCBO | - | 60 V | 60 V |
| Emitter Base Voltage VEBO | - | 6 V | 6 V |
| Collector Emitter Saturation Voltage | - | 0.2 V | 0.143 V |
| Gain Bandwidth Product fT | - | 180 MHz | 200 MHz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| DC Current Gain hFE Max | - | 250 | 295 |
| Continuous Collector Current | - | 1 A | - |
| DC Collector/Base Gain hfe Min | - | 150 | 100 |
| Pd Power Dissipation | - | 2.27 W | 0.53 W |
| Unit Weight | - | 0.000600 oz | - |
| Maximum DC Collector Current | - | - | 1 A |