 |  | | |
| PartNumber | NSV60100DMTWTBG | NSV60101DMR6T1G | NSV60100DUW6T1G |
| Description | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE( | DUAL TRANSISTOR PNP |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Series | NSS60100DMT | - | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SC-74-6 | - |
| Transistor Polarity | - | NPN | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 60 V | - |
| Collector Base Voltage VCBO | - | 60 V | - |
| Emitter Base Voltage VEBO | - | 6 V | - |
| Collector Emitter Saturation Voltage | - | 0.143 V | - |
| Maximum DC Collector Current | - | 1 A | - |
| Gain Bandwidth Product fT | - | 200 MHz | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 295 | - |
| DC Collector/Base Gain hfe Min | - | 100 | - |
| Pd Power Dissipation | - | 0.53 W | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NSV60100DMTWTBG | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | ||
| NSV60101DMTWTBG | Bipolar Transistors - BJT DUAL 60V 1A LOWVCESA | ||
| NSV60101DMR6T1G | Bipolar Transistors - BJT 60V, 1A DUAL NPN LOW VCE( | ||
ON Semiconductor |
NSV60101DMTWTBG | TRANS NPN DUAL 60V 1A 6WDFN | |
| NSV60100DUW6T1G | DUAL TRANSISTOR PNP | ||
| NSV60101DMR6T1G | 60 V, 1 A NPN Bipolar Junction Transisto |