NSV606 stock, NSV606, NSV60601MZ4T1G


PartNumber	NSV60600MZ4T1G	NSV60600MZ4T3G	NSV60600MZ4T1G/3G
Description	Bipolar Transistors - BJT PNP LOW VCE(SAT)	Bipolar Transistors - BJT PNP LOW VCE(SAT)
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-223-4	SOT-223-4	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 60 V	- 60 V	-
Collector Base Voltage VCBO	- 100 V	- 100 V	-
Emitter Base Voltage VEBO	- 6 V	- 6 V	-
Collector Emitter Saturation Voltage	- 0.1 V	- 50 mV	-
Maximum DC Collector Current	- 12 A	- 12 A	-
Gain Bandwidth Product fT	100 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	NSS60600	NSS60600	-
DC Current Gain hFE Max	360 at - 1 A, - 2 V	360	-
Packaging	Reel	Reel	-
Brand	ON Semiconductor	ON Semiconductor	-
DC Collector/Base Gain hfe Min	120	120	-
Pd Power Dissipation	2 W	710 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	1000	4000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.003951 oz	0.003880 oz	-
Continuous Collector Current	-	- 6 A	-

Search Part Number : "NSV606", Match & Start with "NSV606" - Total : 11

製造商	型號	描述
	NSV60601MZ4T1G	Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
	NSV60600MZ4T1G	Bipolar Transistors - BJT PNP LOW VCE(SAT)
	NSV60600MZ4T3G	Bipolar Transistors - BJT PNP LOW VCE(SAT)
	NSV60601MZ4T3G	Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
	NSV60600MZ4T1G/3G	全新原裝
	NSV60601MZ4	全新原裝
	NSV60600MZ4T3G-CUT TAPE	全新原裝
ON Semiconductor	NSV60600MZ4T3G	Bipolar Transistors - BJT PNP LOW VCE(SAT)
	NSV60601MZ4T3G	Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
	NSV60601MZ4T1G	Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
	NSV60600MZ4T1G	Bipolar Transistors - BJT PNP LOW VCE(SAT)

NSV606