 | |  | |
| PartNumber | NTB30N20G | NTB30N20T4G | NTB30N20 |
| Description | MOSFET 200V 30A N-Channel | MOSFET 200V 30A N-Channel | MOSFET N-CH 200V 30A D2PAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | MOT |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Id Continuous Drain Current | 30 A | 30 A | - |
| Rds On Drain Source Resistance | 68 mOhms | 68 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 214 W | 214 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Reel | - |
| Height | 4.83 mm | 4.83 mm | - |
| Length | 10.29 mm | 10.29 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 9.65 mm | 9.65 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 20 S | 20 S | - |
| Fall Time | 24 ns, 88 ns | 24 ns, 88 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 20 ns, 70 ns | 20 ns, 70 ns | - |
| Factory Pack Quantity | 50 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns, 82 ns | 40 ns, 82 ns | - |
| Typical Turn On Delay Time | 10 ns, 12 ns | 10 ns, 12 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NTB30N20G | MOSFET 200V 30A N-Channel | |
| NTB30N20T4G | MOSFET 200V 30A N-Channel | ||
| NTB30N20 | MOSFET N-CH 200V 30A D2PAK | ||
| NTB30N20G | MOSFET N-CH 200V 30A D2PAK | ||
| NTB30N20T4G | MOSFET N-CH 200V 30A D2PAK | ||
| NTB30N20T4 | MOSFET 200V 30A N-Channel |