| PartNumber | NTD12N10-1G | NTD12N10G | NTD12N10T4 |
| Description | MOSFET 100V 12A N-Channel | MOSFET 100V 12A N-Channel | MOSFET N-CH 100V 12A DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 12 A | 12 A | - |
| Rds On Drain Source Resistance | 165 mOhms | 165 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 56.6 W | 1.76 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 6.35 mm | 2.38 mm | - |
| Length | 6.73 mm | 6.73 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 2.38 mm | 6.22 mm | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Forward Transconductance Min | 7 S | 7 S | - |
| Fall Time | 32 ns | 32 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 30 ns | 30 ns | - |
| Factory Pack Quantity | 75 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 22 ns | 22 ns | - |
| Typical Turn On Delay Time | 11 ns | 11 ns | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |