NTD6416

NTD6416AN vs NTD6416ANG vs NTD6416ANL

 
PartNumberNTD6416ANNTD6416ANGNTD6416ANL
Description
ManufacturerON SemiconductorONO
Product CategoryTransistors - FETs, MOSFETs - SingleIC ChipsFETs - Single
PackagingTube--
Unit Weight0.139332 oz--
Mounting StyleThrough Hole--
Package CaseIPAK-3--
TechnologySi--
Number of Channels1 Channel--
ConfigurationSingle--
Transistor Type1 N-Channel--
Pd Power Dissipation71 W--
Maximum Operating Temperature+ 175 C--
Minimum Operating Temperature- 55 C--
Fall Time20 ns--
Rise Time22 ns--
Vgs Gate Source Voltage20 V--
Id Continuous Drain Current17 A--
Vds Drain Source Breakdown Voltage100 V--
Rds On Drain Source Resistance73 mOhms--
Transistor PolarityN-Channel--
Qg Gate Charge20 nC--
Forward Transconductance Min12 S--
製造商 型號 描述 RFQ
NTD6416ANT4G MOSFET NFET DPAK 100V 19A 96MO
NTD6416ANLT4G MOSFET NFET DPAK 100V 17A 106MO
NTD6416AN 全新原裝
NTD6416ANG 全新原裝
NTD6416ANL 全新原裝
NTD6416ANT4G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor
NTD6416ANL-1G MOSFET NFET DPAK 100V 15A 86MOHM
NTD6416AN-1G MOSFET NFET IPAK 100V 15A 86MOHM
NTD6416ANT4G MOSFET N-CH 100V 17A DPAK
NTD6416AN-1G IGBT Transistors MOSFET NFET IPAK 100V 15A 86MOHM
NTD6416ANL-1G IGBT Transistors MOSFET NFET DPAK 100V 15A 86MOHM
NTD6416ANLT4G IGBT Transistors MOSFET NFET DPAK 100V 17A 106MO
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