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| PartNumber | NTF3055-100T3 | NTF3055-100T3G/SOT-223 | NTF3055-100T3G |
| Description | IGBT Transistors MOSFET 60V 3A N-Channel | ||
| Manufacturer | - | - | ONS |
| Product Category | - | - | FETs - Single |
| Series | - | - | NTF3055-100 |
| Packaging | - | - | Reel |
| Unit Weight | - | - | 0.008826 oz |
| Mounting Style | - | - | SMD/SMT |
| Package Case | - | - | SOT-223-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single Dual Drain |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 2.1 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 13 ns |
| Rise Time | - | - | 14 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 3 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 3 V |
| Rds On Drain Source Resistance | - | - | 88 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 21 ns |
| Typical Turn On Delay Time | - | - | 9.4 ns |
| Qg Gate Charge | - | - | 10.6 nC |
| Forward Transconductance Min | - | - | 3.2 S |
| Channel Mode | - | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NTF3055-100T3 | 全新原裝 | ||
| NTF3055-100T3G/SOT-223 | 全新原裝 | ||
| NTF3055-100T3LFG | 全新原裝 | ||
ON Semiconductor |
NTF3055-100T3LF | MOSFET N-CH 60V 3A SOT223 | |
| NTF3055-100T3G | IGBT Transistors MOSFET 60V 3A N-Channel |