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| PartNumber | NTHD4N02FT1G | NTHD4N02FT1G/C2J | NTHD4N02FT1G/C2X |
| Description | MOSFET 20V 3.9A N-Channel w/3.7A Schottky | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 3.9 A | - | - |
| Rds On Drain Source Resistance | 80 mOhms | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 910 mW | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 1.05 mm | - | - |
| Length | 3.05 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 1.65 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 6 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 10 ns | - | - |
| Typical Turn On Delay Time | 5 ns | - | - |
| Unit Weight | 0.002998 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NTHD4N02FT1G | MOSFET 20V 3.9A N-Channel w/3.7A Schottky | |
| NTHD4N02FT1G | MOSFET N-CH 20V 2.9A CHIPFET | ||
| NTHD4N02FT1G/C2J | 全新原裝 | ||
| NTHD4N02FT1G/C2X | 全新原裝 |