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| PartNumber | NTHD4P02FT1 | NTHD4P02FT1 , FLZ36VB | NTHD4P02FT1-D |
| Description | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NTHD4P02FT1G | MOSFET -20V -3A P-Channel w/3A Schottky | ||
| NTHD4P02FT1 | Power Field-Effect Transistor, 2.2A I(D), 20V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| NTHD4P02FT1 , FLZ36VB | 全新原裝 | ||
| NTHD4P02FT1-D | 全新原裝 | ||
| NTHD4P02FT1-D(4703DC) | 全新原裝 | ||
| NTHD4P02FT1-ON | 全新原裝 | ||
| NTHD4P02FT1G , FLZ3V3B | 全新原裝 | ||
| NTHD4P02FT1G- | 全新原裝 | ||
| NTHD4P02FT1G/C3X | 全新原裝 | ||
ON Semiconductor |
NTHD4P02FT1G | 全新原裝 |