NTJD4152P

NTJD4152PT1G vs NTJD4152PT1 vs NTJD4152PT2G

 
PartNumberNTJD4152PT1GNTJD4152PT1NTJD4152PT2G
DescriptionMOSFET 20V 0.88mA P-Channel ESD ProtectionMOSFET 20V 0.88A P-ChannelMOSFET PFET SC88 20V 88MA 2
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYNY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-363-6SOT-363-6SOT-363-6
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current880 mA880 mA880 mA
Rds On Drain Source Resistance1 Ohms600 mOhms1 Ohms
Vgs th Gate Source Threshold Voltage450 mV-450 mV
Vgs Gate Source Voltage1.8 V12 V1.8 V
Qg Gate Charge2.2 nC-2.2 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation272 mW272 mW350 mW
ConfigurationDualDualDual
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height0.9 mm0.9 mm-
Length2 mm2 mm-
ProductMOSFET Small SignalMOSFET Small Signal-
SeriesNTJD4152P--
Transistor Type2 P-Channel2 P-Channel2 P-Channel
TypeMOSFETMOSFET-
Width1.25 mm1.25 mm-
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min3 S3 S3 S
Fall Time3.5 ns6.5 ns3.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6.5 ns6.5 ns6.5 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time13.5 ns13.5 ns13.5 ns
Typical Turn On Delay Time5.8 ns5.8 ns5.8 ns
Unit Weight0.000265 oz0.000265 oz0.000265 oz
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
NTJD4152PT1G MOSFET 20V 0.88mA P-Channel ESD Protection
NTJD4152PT1 MOSFET 20V 0.88A P-Channel
NTJD4152PT2G MOSFET PFET SC88 20V 88MA 2
NTJD4152PT1G MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT1 MOSFET 2P-CH 20V 0.88A SOT-363
NTJD4152PT2G MOSFET 2P-CH 20V 0.88A SC88-6
NTJD4152P 全新原裝
NTJD4152PT1G , FLZ8V2B 全新原裝
NTJD4152PT1H 全新原裝
NTJD4152PTI 全新原裝
NTJD4152PT1G-CUT TAPE 全新原裝
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