NTJD4401NT1G vs NTJD4401NT1-CT vs NTJD4401NT1G , MAX6761TA

PartNumber	NTJD4401NT1G	NTJD4401NT1-CT	NTJD4401NT1G , MAX6761TA
Description	MOSFET 20V Dual N-Channel ESD Protection
Manufacturer	ON Semiconductor	-	-
Product Category	MOSFET	-	-
RoHS	Y	-	-
Technology	Si	-	-
Mounting Style	SMD/SMT	-	-
Package / Case	SC-88-6	-	-
Number of Channels	2 Channel	-	-
Transistor Polarity	N-Channel	-	-
Vds Drain Source Breakdown Voltage	20 V	-	-
Id Continuous Drain Current	910 mA	-	-
Rds On Drain Source Resistance	375 mOhms	-	-
Vgs th Gate Source Threshold Voltage	600 mV	-	-
Vgs Gate Source Voltage	4.5 V	-	-
Qg Gate Charge	1.3 nC	-	-
Minimum Operating Temperature	- 55 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Pd Power Dissipation	0.55 W	-	-
Configuration	Dual	-	-
Channel Mode	Enhancement	-	-
Packaging	Reel	-	-
Height	0.9 mm	-	-
Length	2 mm	-	-
Product	MOSFET Small Signal	-	-
Series	NTJD4401N	-	-
Transistor Type	2 N-Channel	-	-
Type	MOSFET	-	-
Width	1.25 mm	-	-
Brand	ON Semiconductor	-	-
Forward Transconductance Min	2 S	-	-
Fall Time	506 ns	-	-
Product Type	MOSFET	-	-
Rise Time	227 ns	-	-
Factory Pack Quantity	3000	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	786 ns	-	-
Typical Turn On Delay Time	83 ns	-	-
Unit Weight	0.010229 oz	-	-

• 從...開始
• NTJD4401NT1 7
• NTJD4401NT 12
• NTJD4401N 13
• NTJD4401 14
• NTJD440 15
• NTJD4 48
• NTJD 78
• NTJ 127

Search Part Number : "NTJD4401NT1", Match & Start with "NTJD4401NT1" - Total : 9

製造商	型號	描述	RFQ
	NTJD4401NT1G	MOSFET 20V Dual N-Channel ESD Protection	RFQ
	NTJD4401NT1-CT	全新原裝	RFQ
	NTJD4401NT1G , MAX6761TA	全新原裝	RFQ
	NTJD4401NT1G TES	全新原裝	RFQ
	NTJD4401NT1G-001	Transistor MOSFET Array Dual N-Channel Enhancement 20V 0.63A 6-Pin SC-88 T/R - Bulk (Alt: NTJD4401NT1G-001)	RFQ
	NTJD4401NT1G-CUT TAPE	全新原裝	RFQ
ON Semiconductor	NTJD4401NT1	MOSFET 20V Dual N-Channel	RFQ
	NTJD4401NT1G	MOSFET 2N-CH 20V 0.63A SOT-363	RFQ
	NTJD4401NT1	MOSFET 2N-CH 20V 0.63A SOT363	RFQ