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| PartNumber | NTMFD5C674NLT1G | NTMFD5C680NLT1G | NTMFD5C650NLT1G |
| Description | MOSFET T6 60V LL S08FL DS | MOSFET T6 60V LL SO8FL DUAL | MOSFET T6 60V LL S08FL DS |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | DFN-8 | DFN-8 | DFN-8 |
| Number of Channels | 2 Channel | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 42 A | 26 A | 111 A |
| Rds On Drain Source Resistance | 14.4 mOhms | 28 mOhms | 4.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 10 nC | 5 nC | 37 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 37 W | 19 W | 125 W |
| Configuration | Dual | Dual | Dual |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 27.5 S | 50 S | 120 S |
| Fall Time | 27.5 ns | 23 ns | 13 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 32.1 ns | 25 ns | 24 ns |
| Factory Pack Quantity | 1500 | 1500 | 1500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18.6 ns | 19 ns | 37 ns |
| Typical Turn On Delay Time | 9.4 ns | 6.4 ns | 13 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NTMFD5C674NLT1G | MOSFET T6 60V LL S08FL DS | ||
| NTMFD5C680NLT1G | MOSFET T6 60V LL SO8FL DUAL | ||
| NTMFD5C650NLT1G | MOSFET T6 60V LL S08FL DS | ||
ON Semiconductor |
NTMFD5C650NLT1G | T6 60V LL S08FL DS | |
| NTMFD5C674NLT1G | T6 60V LL S08FL DS | ||
| NTMFD5C680NLT1G | T6 60V LL SO8FL DUAL |