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NTMFS4821

NTMFS4821NT1G vs NTMFS4821N vs NTMFS4821NT1G NTMFS482

 
PartNumberNTMFS4821NT1GNTMFS4821NNTMFS4821NT1G NTMFS482
DescriptionMOSFET NFET SO8FL 30V TR
ManufacturerON SemiconductorON-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-FL-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current58.5 A--
Rds On Drain Source Resistance8.4 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge25 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation38.5 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.05 mm--
Length4.9 mm--
SeriesNTMFS4821NNTMFS4821N-
Transistor Type1 N-Channel1 N-Channel-
Width5.8 mm--
BrandON Semiconductor--
Forward Transconductance Min54 S--
Fall Time3.8 ns3.8 ns-
Product TypeMOSFET--
Rise Time38 ns38 ns-
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time16.6 ns16.6 ns-
Typical Turn On Delay Time13.3 ns13.3 ns-
Package Case-SO-8FL-
Pd Power Dissipation-38.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-58.5 A-
Vds Drain Source Breakdown Voltage-30 V-
Vgs th Gate Source Threshold Voltage-1.8 V-
Rds On Drain Source Resistance-8.4 mOhms-
Qg Gate Charge-25 nC-
Forward Transconductance Min-54 S-
製造商 型號 描述 RFQ
NTMFS4821NT1G MOSFET NFET SO8FL 30V TR
NTMFS4821N 全新原裝
NTMFS4821NT1G NTMFS482 全新原裝
NTMFS4821NT1G-CUT TAPE 全新原裝
ON Semiconductor
ON Semiconductor 		NTMFS4821NT3G MOSFET NFET SO8FL 30V TR
NTMFS4821NT1G MOSFET N-CH 30V 8.8A SO-8FL
NTMFS4821NT3G MOSFET N-CH 30V 8.8A SO-8FL
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