 |  | | |
| PartNumber | NTMFS5832NLT1G | NTMFS5832NL | NTMFS5834NLT3G |
| Description | MOSFET NFET SO8FL 40V 110A 4.2MO | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-FL-8 | - | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 6.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Packaging | Reel | Reel | - |
| Series | NTMFS5832NL | NTMFS5832NL | - |
| Brand | ON Semiconductor | - | - |
| Forward Transconductance Min | 21 S | - | - |
| Fall Time | 8 ns | 8 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 24 ns | 24 ns | - |
| Factory Pack Quantity | 1500 | - | - |
| Subcategory | MOSFETs | - | - |
| Package Case | - | SO-8FL | - |
| Pd Power Dissipation | - | 3.1 W | - |
| Id Continuous Drain Current | - | 20 A | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Rds On Drain Source Resistance | - | 6.5 mOhms | - |
| Qg Gate Charge | - | 25 nC | - |
| Forward Transconductance Min | - | 21 S | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NTMFS5844NLT1G | MOSFET 60V NCH T2 SO8FL | ||
| NTMFS5832NLT1G | MOSFET NFET SO8FL 40V 110A 4.2MO | ||
| NTMFS5832NL | 全新原裝 | ||
| NTMFS5834NLT3G | 全新原裝 | ||
ON Semiconductor |
NTMFS5834NLT1G | MOSFET NFET SO8FL 40V 69A 9.3MOH | |
| NTMFS5830NLT1G | MOSFET SO8FL 40V | ||
| NTMFS5830NLT1G | MOSFET N-CH 40V 28A SO-8FL | ||
| NTMFS5832NLT1G | MOSFET N-CH 40V 110A SO-8FL | ||
| NTMFS5844NLT1G | MOSFET N-CH 60V 60A SO-8FL | ||
| NTMFS5834NLT1G | IGBT Transistors NFET SO8FL 40V 69A 9.3MOH |