NTMFS5C670

NTMFS5C670NLT3G vs NTMFS5C670NLT1G vs NTMFS5C670NL

 
PartNumberNTMFS5C670NLT3GNTMFS5C670NLT1GNTMFS5C670NL
DescriptionMOSFET NFET SO8FL 40V 68A 6.7MOHMOSFET NFET SO8FL 40V 68A 6.7MOH
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-FL-8SO-FL-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V-
Id Continuous Drain Current71 A71 A-
Rds On Drain Source Resistance8.8 mOhms8.8 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.2 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge20 nC20 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation61 W61 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Transistor Type1 N-channel1 N-channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Forward Transconductance Min82 S82 S-
Fall Time4 ns4 ns4 ns
Product TypeMOSFETMOSFET-
Rise Time60 ns60 ns60 ns
Factory Pack Quantity50001500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15 ns15 ns15 ns
Typical Turn On Delay Time11 ns11 ns11 ns
Unit Weight-0.003781 oz-
Package Case--DFN-5
Pd Power Dissipation--61 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--71 A
Vds Drain Source Breakdown Voltage--60 V
Vgs th Gate Source Threshold Voltage--1.2 V
Rds On Drain Source Resistance--8.8 mOhms
Qg Gate Charge--20 nC
Forward Transconductance Min--82 S
製造商 型號 描述 RFQ
NTMFS5C670NLT3G MOSFET NFET SO8FL 40V 68A 6.7MOH
NTMFS5C670NL 全新原裝
ON Semiconductor
ON Semiconductor
NTMFS5C670NLT1G MOSFET NFET SO8FL 40V 68A 6.7MOH
NTMFS5C670NLT1G MOSFET N-CH 60V 68A SO8FL
NTMFS5C670NLT3G MOSFET N-CH 60V 68A SO8FL
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