NTZD3156

NTZD3156CT1G vs NTZD3156CT2G vs NTZD3156CT5G

 
PartNumberNTZD3156CT1GNTZD3156CT2GNTZD3156CT5G
DescriptionMOSFET 20/6V Comp w/100K G-S ResistorsMOSFET N/P-CH 20V SOT-563MOSFET N/P-CH 20V SOT-563
ManufacturerON Semiconductor-ON Semiconductor
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-563-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current540 mA--
Rds On Drain Source Resistance550 mOhms, 900 mOhms--
Vgs Gate Source Voltage6 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation280 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR)
Height0.55 mm--
Length1.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel, 1 P-Channel--
TypeSmall Signal MOSFET--
Width1.2 mm--
BrandON Semiconductor--
Forward Transconductance Min1.46 S, 1.18 S--
Fall Time10 ns, 19.5 ns--
Product TypeMOSFET--
Rise Time5.3 ns, 6.5 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns, 29 ns--
Typical Turn On Delay Time7.7 ns, 9.2 ns--
Unit Weight0.000106 oz--
Series---
Package Case--SOT-563, SOT-666
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--SOT-563
FET Type--N and P-Channel
Power Max--250mW
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--72pF @ 16V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--540mA, 430mA
Rds On Max Id Vgs--550 mOhm @ 540mA, 4.5V
Vgs th Max Id--1V @ 250μA
Gate Charge Qg Vgs--2.5nC @ 4.5V
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
NTZD3156CT1G MOSFET 20/6V Comp w/100K G-S Resistors
NTZD3156CT1G MOSFET N/P-CH 20V SOT-563
NTZD3156CT2G MOSFET N/P-CH 20V SOT-563
NTZD3156CT5G MOSFET N/P-CH 20V SOT-563
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