 |  | |
| PartNumber | NVD5117PLT4G-VF01 | NVD5117PLT4G |
| Description | MOSFET PFET DPAK 60V 61A 16MOHM | MOSFET 60V T1 PCH DPAK |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DPAK-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 61 A | 11 A |
| Rds On Drain Source Resistance | 16 mOhms | 22 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V |
| Vgs Gate Source Voltage | 20 V | 4.5 V |
| Qg Gate Charge | 85 nC | 85 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 118 W | 118 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Brand | ON Semiconductor | ON Semiconductor |
| Forward Transconductance Min | 30 S | 30 S |
| Fall Time | 132 ns | 132 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 195 ns | 195 ns |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 50 ns | 50 ns |
| Typical Turn On Delay Time | 22 ns | 22 ns |
| Series | - | NVD5117PL |
| Transistor Type | - | 1 P-Channel |
| Unit Weight | - | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor |
NVD5117PLT4G-VF01 | MOSFET PFET DPAK 60V 61A 16MOHM | |
| NVD5117PLT4G-VF01 | MOSFET P-CH 60V 61A DPAK | ||
| NVD5117PLT4G | MOSFET 60V T1 PCH DPAK | ||
| NVD5117PLT4G | MOSFET P-CH 60V 61A DPAK | ||
| NVD5117OLT4G | 全新原裝 | ||
| NVD5117PL | 全新原裝 |