 |  | |
| PartNumber | NVD6820NLT4G | NVD6820NLT4G-VF01 |
| Description | MOSFET NFET DPAK 90V 50A 17MOHM | MOSFET NFET DPAK 90V 50A 17MOHM |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | DPAK-3 |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 90 V | 90 V |
| Id Continuous Drain Current | 50 A | 50 A |
| Rds On Drain Source Resistance | 16.7 mOhms | 16.7 mOhms |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Series | NVD6820NL | - |
| Brand | ON Semiconductor | ON Semiconductor |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | - |
| Number of Channels | - | 1 Channel |
| Vgs th Gate Source Threshold Voltage | - | 1.5 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 83 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 100 W |
| Configuration | - | Single |
| Channel Mode | - | Enhancement |
| Fall Time | - | 59 ns |
| Rise Time | - | 98 ns |
| Typical Turn Off Delay Time | - | 36 ns |
| Typical Turn On Delay Time | - | 19 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| NVD6820NLT4G | MOSFET NFET DPAK 90V 50A 17MOHM | ||
| NVD6820NLT4G | RF Bipolar Transistors MOSFET NFET DPAK 90V 50A 17MOHM | ||
ON Semiconductor |
NVD6820NLT4G-VF01 | MOSFET NFET DPAK 90V 50A 17MOHM | |
| NVD6820NLT4G-VF01 | MOSFET N-CH 90V 50A DPAK | ||
| NVD6820NL | 全新原裝 | ||
| NVD6820NLT4GP | 全新原裝 |