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| PartNumber | PBSS4160PANP,115 | PBSS4160PANPSX |
| Description | Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor | Bipolar Transistors - BJT 60V 1A NPN/PNP |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DFN-2020-6 | DFN-2020-6 |
| Transistor Polarity | NPN, PNP | NPN, PNP |
| Configuration | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 60 V | 60 V |
| Collector Base Voltage VCBO | 60 V | 60 V |
| Emitter Base Voltage VEBO | 7 V | 7 V |
| Collector Emitter Saturation Voltage | 90 mV, - 125 mV | 90 mV, - 125 mV |
| Maximum DC Collector Current | 1.5 A | 1 A, - 1 A |
| Gain Bandwidth Product fT | 175 MHz, 125 MHz | 175 MHz, 125 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| DC Current Gain hFE Max | 430, 245 | - |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Continuous Collector Current | 1 A | - |
| DC Collector/Base Gain hfe Min | 290, 245 | 290, 170 |
| Pd Power Dissipation | 1450 mW | 2 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | Transistors | Transistors |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PBSS4160PANP,115 | Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor | |
| PBSS4160PANPSX | Bipolar Transistors - BJT 60V 1A NPN/PNP | ||
| PBSS4160PANPSX | TRANS NPN/PNP 60V 1A 6HUSON | ||
| PBSS4160PANP,115 | Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transisto | ||
| PBSS4160PANP115 | Now Nexperia PBSS4160PANP - Small Signal Bipolar Transistor, HUSON6 | ||
| PBSS4160PANPS115 | - Bulk (Alt: PBSS4160PANPS115) |