 |  | |
| PartNumber | PBSS5480X,135 | PBSS5480XZ |
| Description | Bipolar Transistors - BJT TRANS BISS TAPE-13 | Bipolar Transistors - BJT BL Bipolar Discretes |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | UPAK-3 | SOT-89-3 |
| Transistor Polarity | PNP | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 80 V | - |
| Collector Base Voltage VCBO | 80 V | - |
| Emitter Base Voltage VEBO | 5 V | - |
| Maximum DC Collector Current | 4 A | - |
| Gain Bandwidth Product fT | 125 MHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| DC Current Gain hFE Max | 200 at 500 mA, 2 V | - |
| Height | 1.6 mm | - |
| Length | 4.6 mm | - |
| Packaging | Reel | Bulk |
| Width | 2.6 mm | - |
| Brand | Nexperia | Nexperia |
| DC Collector/Base Gain hfe Min | 200 at 500 mA, 2 V, 180 at 1 A, 2 V, 150 at 2 A, 2 V, 80 at 4 A, 2 V | - |
| Pd Power Dissipation | 2500 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 4000 | 1000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | /T3 PBSS5480X | - |
| Unit Weight | 0.035274 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PBSS5480X,135 | Bipolar Transistors - BJT TRANS BISS TAPE-13 | |
| PBSS5480XZ | Bipolar Transistors - BJT BL Bipolar Discretes | ||
| PBSS5480X,135 | Bipolar Transistors - BJT TRANS BISS TAPE-13 | ||
| PBSS5480XZ | PBSS5480X/SOT89/MPT3 | ||
| PBSS5480X | TRANSISTOR, PNP, SOT-89 |