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| PartNumber | PDTC114EMB,315 | PDTC114EM,315 |
| Description | Bipolar Transistors - Pre-Biased PDTC114EMB/XQFN3/REEL 7" Q1/T1 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 |
| Manufacturer | Nexperia | Nexperia |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased |
| RoHS | Y | Y |
| Package / Case | DFN-1006-3 | DFN-1006-3 |
| Packaging | Reel | Reel |
| Brand | Nexperia | Nexperia |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased |
| Qualification | AEC-Q101 | AEC-Q101 |
| Factory Pack Quantity | 10000 | 10000 |
| Subcategory | Transistors | Transistors |
| Configuration | - | Single |
| Transistor Polarity | - | NPN |
| Typical Input Resistor | - | 10 kOhms |
| Typical Resistor Ratio | - | 1 |
| Mounting Style | - | SMD/SMT |
| DC Collector/Base Gain hfe Min | - | 30 |
| Collector Emitter Voltage VCEO Max | - | 50 V |
| Continuous Collector Current | - | 100 mA |
| Peak DC Collector Current | - | 100 mA |
| Pd Power Dissipation | - | 250 mW |
| Minimum Operating Temperature | - | - 65 C |
| Maximum Operating Temperature | - | + 150 C |
| Emitter Base Voltage VEBO | - | 10 V |
| Height | - | 0.47 mm |
| Length | - | 1.02 mm |
| Width | - | 0.62 mm |
| Part # Aliases | - | PDTC114EM T/R |
| Unit Weight | - | 0.000031 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PDTC114EMB,315 | Bipolar Transistors - Pre-Biased PDTC114EMB/XQFN3/REEL 7" Q1/T1 | |
| PDTC114EM,315 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTC114EMB,315 | TRANS PREBIAS NPN 250MW 3DFN | ||
| PDTC114EM,315 | Bipolar Transistors - Pre-Biased TRANS RET TAPE-7 | ||
| PDTC114EM | NPN resistor-equipped transisto | ||
| PDTC114EM+315 | - Bulk (Alt: PDTC114EM315) | ||
| PDTC114EM315 | - Bulk (Alt: PDTC114EM315) | ||
| PDTC114EMB315 | Now Nexperia PDTC114EMB - Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, XQFN3 |