 | |  | |
| PartNumber | PHB21N06LT,118 | PHB20N06T,118 | PHB20NQ20T,118 |
| Description | MOSFET TAPE13 PWR-MOS | MOSFET RAIL MOSFET | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS |
| Manufacturer | Nexperia | Nexperia | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 19 A | 20.3 A | - |
| Rds On Drain Source Resistance | 70 mOhms | 75 mOhms | - |
| Vgs Gate Source Voltage | 15 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 56 W | 62 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Nexperia | Nexperia | - |
| Fall Time | 25 ns | 40 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 88 ns | 50 ns | - |
| Factory Pack Quantity | 800 | 800 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 70 ns | - |
| Typical Turn On Delay Time | 7 ns | 10 ns | - |
| Part # Aliases | /T3 PHB21N06LT | /T3 PHB20N06T | - |
| Unit Weight | 0.077603 oz | 0.050371 oz | - |
| Height | - | 4.5 mm | - |
| Length | - | 10.3 mm | - |
| Width | - | 9.4 mm | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PHB29N08T,118 | MOSFET TAPE13 MOSFET | |
| PHB27NQ10T,118 | MOSFET TAPE13 PWR-MOS | ||
| PHB21N06LT,118 | MOSFET TAPE13 PWR-MOS | ||
| PHB20N06T,118 | MOSFET RAIL MOSFET | ||
| PHB29N08T,118 | IGBT Transistors MOSFET TAPE13 MOSFET | ||
| PHB20NQ20T,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| PHB20N06T,118 | RF Bipolar Transistors MOSFET RAIL MOSFET | ||
| PHB21N06LT,118 | RF Bipolar Transistors MOSFET TAPE13 PWR-MOS | ||
| PHB27NQ10T,118 | MOSFET N-CH 100V 28A D2PAK | ||
NXP Semiconductors |
PHB222NQ04LT,118 | MOSFET N-CH 40V 75A D2PAK | |
| PHB225NQ04T,118 | MOSFET N-CH 40V 75A D2PAK | ||
| PHB23NQ10LT,118 | MOSFET N-CH 100V 23A D2PAK | ||
| PHB20NQ20T118 | Now Nexperia PHB20NQ20T Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB21N06LT /T3 | MOSFET TAPE13 PWR-MOS | ||
| PHB2-08S-020 | 全新原裝 | ||
| PHB2006 | 全新原裝 | ||
| PHB20N06LT | 全新原裝 | ||
| PHB20N06T | 全新原裝 | ||
| PHB20N06T118 | Now Nexperia PHB20N06T - Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB20NQ20 | 全新原裝 | ||
| PHB20NQ20T | 全新原裝 | ||
| PHB20NQ20T+118 | Now Nexperia PHB20NQ20T Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB211V06LT | 全新原裝 | ||
| PHB212-1702A01 | 全新原裝 | ||
| PHB2166YBIHP | 全新原裝 | ||
| PHB21N06 | 全新原裝 | ||
| PHB21N06LT | 全新原裝 | ||
| PHB21N06LT118 | Now Nexperia PHB21N06LT - Power Field-Effect Transistor, 19A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB21N06T | 全新原裝 | ||
| PHB222NQ04LT | 全新原裝 | ||
| PHB22N06LT | 全新原裝 | ||
| PHB23NQ10LT | 全新原裝 | ||
| PHB23NQ10T | 全新原裝 | ||
| PHB23NQ15T | 全新原裝 | ||
| PHB2401T V2.1 | 全新原裝 | ||
| PHB24N03LT | 全新原裝 | ||
| PHB25201T-1R0MSR | 全新原裝 | ||
| PHB25201T-1R5MSR | 全新原裝 | ||
| PHB25201T-2R2JS | 全新原裝 | ||
| PHB25201T-2R2JS/PSB25201 | 全新原裝 | ||
| PHB25201T-2R2MSR | 全新原裝 | ||
| PHB25201T-4R7MSR | 全新原裝 | ||
| PHB25201T-R68MS | 全新原裝 | ||
| PHB25201T-R68MSR | 全新原裝 | ||
| PHB27NQ10T | 全新原裝 | ||
| PHB27NQ10T 118 | 全新原裝 | ||
| PHB27NQ10T118 | Now Nexperia PHB27NQ10T - Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK | ||
| PHB29N08 | 全新原裝 | ||
| PHB29N08T | MOSFET, N-CH, 75V, 27A, TO-263 | ||
| PHB225NQ04T | 全新原裝 |