PHD9N

PHD9NQ20T,118 vs PHD9N20T vs PHD9NQ20T

 
PartNumberPHD9NQ20T,118PHD9N20TPHD9NQ20T
DescriptionMOSFET TAPE13 PWR-MOS
ManufacturerNexperia-NXP
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance300 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation88 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.38 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandNexperia--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time19 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time25 ns--
Typical Turn On Delay Time8 ns--
Part # Aliases/T3 PHD9NQ20T--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
Nexperia
Nexperia
PHD9NQ20T,118 MOSFET TAPE13 PWR-MOS
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