PMDP

PMDPB85UPE,115 vs PMDPB85UPE115 vs PMDPB95XNE

 
PartNumberPMDPB85UPE,115PMDPB85UPE115PMDPB95XNE
DescriptionMOSFET PMDPB85UPE/HUSON6/REEL 7" Q1/T- Bulk (Alt: PMDPB85UPE115)
ManufacturerNexperia-NXP Semiconductors
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDFN-2020-6--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current3.7 A--
Rds On Drain Source Resistance82 mOhms, 82 mOhms--
Vgs th Gate Source Threshold Voltage950 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge8.1 nC, 8.1 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.17 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Digi-ReelR
Transistor Type2 P-Channel--
BrandNexperia--
Forward Transconductance Min6 S, 6 S--
Fall Time21 ns, 21 ns--
Product TypeMOSFET--
Rise Time12 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns, 47 ns--
Typical Turn On Delay Time6 ns, 6 ns--
Series---
Package Case--6-UDFN Exposed Pad
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--6-HUSON (2x2)
FET Type--2 N-Channel (Dual)
Power Max--475mW
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--143pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--2.4A
Rds On Max Id Vgs--120 mOhm @ 2A, 4.5V
Vgs th Max Id--1.5V @ 250μA
Gate Charge Qg Vgs--2.5nC @ 4.5V
製造商 型號 描述 RFQ
Nexperia
Nexperia
PMDPB95XNE2X MOSFET PMDPB95XNE2/HUSON6/REEL 7" Q1/
PMDPB85UPE,115 MOSFET 2P-CH 20V 2.9A 6HUSON
PMDPB95XNE2X MOSFET 2 N-CH 30V 2.7A 6HUSON
PMDPB85UPE115 - Bulk (Alt: PMDPB85UPE115)
PMDPB95XNE 全新原裝
PMDPB95XNE115 - Bulk (Alt: PMDPB95XNE115)
PMDPB95XNE2 全新原裝
NXP Semiconductors
NXP Semiconductors
PMDPB95XNE,115 IGBT Transistors MOSFET PMDPB95XNE/HUSON6/REEL7
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