 |  |  | |
| PartNumber | PMEG3010AESAYL | PMEG3010AESBYL | PMEG3010AESBZ |
| Description | Schottky Diodes & Rectifiers BL Bipolar Discretes | Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier | DIODE SCHOTTKY 30V 1A DSN1006-2 |
| Manufacturer | Nexperia | Nexperia | NXP Semiconductors |
| Product Category | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single |
| RoHS | Y | Y | - |
| Package / Case | DSN-1006U-2 | DSN-1006-2 | - |
| Technology | Si | Si | - |
| Packaging | Reel | Reel | Tape & Reel (TR) |
| Brand | Nexperia | Nexperia | - |
| Product Type | Schottky Diodes & Rectifiers | Schottky Diodes & Rectifiers | - |
| Factory Pack Quantity | 10000 | 10000 | - |
| Subcategory | Diodes & Rectifiers | Diodes & Rectifiers | - |
| Product | - | Schottky Rectifiers | - |
| Mounting Style | - | SMD/SMT | - |
| If Forward Current | - | 1 A | - |
| Vrrm Repetitive Reverse Voltage | - | 30 V | - |
| Vf Forward Voltage | - | 415 mV | - |
| Ifsm Forward Surge Current | - | 10 A | - |
| Configuration | - | Single | - |
| Ir Reverse Current | - | 300 uA | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Operating Temperature Range | - | - 55 C to + 150 C | - |
| Termination Style | - | SMD/SMT | - |
| Type | - | Low VF MEGA Schottky Barrier Rectifier | - |
| Pd Power Dissipation | - | 1.78 W | - |
| trr Reverse Recovery time | - | 3.5 ns | - |
| Vr Reverse Voltage | - | 30 V | - |
| Unit Weight | - | 0.000014 oz | - |
| Series | - | - | - |
| Package Case | - | - | 2-XDFN |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DSN1006-2 |
| Speed | - | - | Fast Recovery = 200mA (Io) |
| Diode Type | - | - | Schottky |
| Current Reverse Leakage Vr | - | - | 1.25mA @ 30V |
| Voltage Forward Vf Max If | - | - | 480mV @ 1A |
| Voltage DC Reverse Vr Max | - | - | 30V |
| Current Average Rectified Io | - | - | 1A |
| Reverse Recovery Time trr | - | - | 3.5ns |
| Capacitance Vr F | - | - | 32pF @ 10V, 1MHz |
| Operating Temperature Junction | - | - | 150°C (Max) |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PMEG3010AESAYL | Schottky Diodes & Rectifiers BL Bipolar Discretes | |
| PMEG3010AESBYL | Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier | ||
| PMEG3010AESBYL | Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifie | ||
| PMEG3010AESAYL | DIODE SCHOTTKY 30V 1A DSN1006U-2 | ||
| PMEG3010AESBZ | DIODE SCHOTTKY 30V 1A DSN1006-2 | ||
| PMEG3010AESB315 | MEGA Schottky Barrier Rectifier 30V 1A 2-Pin DSN - Bulk (Alt: PMEG3010AESB315) | ||
| PMEG3010AESA315 | Now Nexperia PMEG3010AE Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon, SOD995 | ||
| PMEG3010AESB314 | Now Nexperia PMEG3010AE - Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon | ||
| PMEG3010AESBC315 | Now Nexperia PMEG3010AESBC - Rectifier Diode, Schottky, 1 Element, 30V V(RRM), Silicon |