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| PartNumber | PMXB360ENEAZ | PMXB360ENEA | PMXB360ENEA147 |
| Description | MOSFET 80 V, N-channel Trench MOSFET | - Bulk (Alt: PMXB360ENEA147) | |
| Manufacturer | Nexperia | NXP Semiconductors | - |
| Product Category | MOSFET | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | Details | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DFN-1010D-3 | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 1.1 A | - | - |
| Rds On Drain Source Resistance | 345 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.7 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 3 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 400 mW | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | NXP Semiconductors | - |
| Forward Transconductance Min | 3.2 S | - | - |
| Fall Time | 3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.5 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9 ns | - | - |
| Typical Turn On Delay Time | 2 ns | - | - |
| Unit Weight | 0.000042 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Nexperia |
PMXB360ENEAZ | MOSFET 80 V, N-channel Trench MOSFET | |
| PMXB360ENEAZ | MOSFET N-CH 80V 1.1A 3DFN | ||
| PMXB360ENEA | 全新原裝 | ||
| PMXB360ENEA147 | - Bulk (Alt: PMXB360ENEA147) |